Members

Chang-Hyun Kim is an Associate Professor in the School of Electrical Engineering and Computer Science at the University of Ottawa, Canada. More information about his career can be found here.

Kannan Udaya Mohanan received BSc (2010) and MSc (2012) in Physics from the University of Kerala, India, and PhD (2019) in Physics from Indian Institute of Technology (IIT) Hyderabad. He worked at IIT Delhi and Gachon University, South Korea, before joining uOttawa as a Postdoctoral Fellow. His current research topics include advanced logic gates, wearable sensors and neuromorphic systems.

Bonkee Kim completed electrical engineering degrees at the Korea Advanced Institute of Science and Technology (KAIST) and developed an extensive industrial career at companies including Samsung Electronics, Analog Devices and HiDeep. He is currently pursuing PhD in Electrical and Computer Engineering at uOttawa, focusing on Si transistors and analog circuit design for AI accelerators.

Joonhyung Park received BEng in Electronic Engineering with a specialization on display technology (2023) and MEng (thesis-based) in Semiconductor Engineering (2024) from Gachon University, South Korea. He is pursuing PhD in Electrical and Computer Engineering at uOttawa. His current research focuses on the physics of contact-controlled transistors and their application to high-gain amplifiers.

Hayong Rhie is an undergraduate intern pursuing an Honours BSc degree in Physics at uOttawa. She is expected to graduate in 2026, and then transition into a MASc in Electrical and Computer Engineering at the same institution. Her current research focuses on identifying the mechanism of InGaN/GaN micro-LEDs through broadband impedance spectroscopy.

Zachary J. Levesque is pursuing BSc in Physics-BASc in Electrical Engineering dual degree at uOttawa. His current research focuses on the non-linear charge injection in Schottky-barrier transistors.

Samir Jr Abou-Serhal is pursuing BSc in Physics-BASc in Electrical Engineering dual degree at uOttawa. His current research focuses on the saturation mechanism of source-gated transistors.